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| IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 VDSS ID25 RDS(on) PDC V V V V A A A mJ V/ns V/ns = = = 600 V 18 A 0.47 880 W Maximum Ratings 600 600 20 30 18 90 18 TBD 5 >200 880 DRAIN PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25C, Derate 4.4W/C above 25C Tc = 25C W GATE 440 3.0 0.17 0.34 W W C/W C/W SG1 SG2 SD1 SD2 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. V 4.0 5.5 100 TJ = 25C TJ =125C Features VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250 VGS = 20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 600 3.2 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials V nA A mA S 50 1 0.44 4.0 -55 175 -55 + 175 300 3.5 5.2 +175 0.47 VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 50V, ID = 0.5ID25, pulse test C C C C g Advantages * Optimized for RF and high speed * Easy to mount--no insulators needed * High power density 1.6mm(0.063 in) from case for 10 s IXZ316N60 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = Is, VGS=0 V, Pulse test, t 300 s, duty cycle 2% VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz typ. max. 1 pF pF pF pF ns ns ns ns 1930 160 16 33 4 4 4 6 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 18 108 1.5 200 A A V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the "Device Installation & Mounting Instructions" technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,731,002 5,017,508 5,486,715 6,727,585 IXZ316N60 Z-MOS RF Power MOSFET Fig. 1 Typical Transfer Characteristics 50 45 40 35 30 25 20 15 10 5 0 4 5 6 7 8 9 10 11 12 0 0 20 40 60 80 100 120 20 9V - 12V 7V Fig. 2 Typical Output Characteristics ID, Drain Currnet (A) ID , Drain Current (A) 15 6.5V 10 6V 5.5V 5V 5 VGS, Gate-to Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 3 Gate Charge vs. Gate-to-Source Voltage V DS = 300V, ID = 9A, IG= 3m A Fig. 4 Extended Typical Output Characteristics 80 Top 10V - 12V 9V 8V 7.5V 7V 6.5V 6V 5.5V 16 Gate-to-Source Voltage (V) 14 ID , Drain Currnet (A) 12 10 8 6 4 2 0 0 20 40 60 80 60 40 Bottom 20 0 0 20 40 60 80 100 120 Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 5 VD S vs. Capacitance 10000 Ciss Capacitance (pF) 1000 Coss 100 10 Crss 1 0 60 120 180 240 300 360 420 480 VDS Voltage (V) IXZ316N60 Z-MOS RF Power MOSFET Fig. 6 Package Drawing Source Source Gate Drain Source Source Doc #dsIXZ316N60 REV 08/09 (c) 2009 IXYS RF An 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com IXYS Company |
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